【三星电子NRD-K半导体研发综合体进机 将导入ASML High NA EUV光刻设备】金十数据11月20日讯，三星电子举行了位于器兴园区的NRD-K新半导体研发综合体的进机仪式。NRD-K半导体研发综合体将成为三星电子DS部下属三大事业部（存储器、系统LSI和Foundry）的共同核心研发基地，到2030年这一项目将累计获得约20万亿韩元的投资。NRD-K还将包含一条研发专用线，该产线将于2025年中投入使用。NRD-K综合体将导入ASML High NA EUV光刻机、新材料沉积设备在内的一系列最先进半导体生产工具，旨在加速3D DRAM、千层V-NAND在内的下代存储芯片开发。
Disclaimer: Investing carries risk. This is not financial advice. The above content should not be regarded as an offer, recommendation, or solicitation on acquiring or disposing of any financial products, any associated discussions, comments, or posts by author or other users should not be considered as such either. It is solely for general information purpose only, which does not consider your own investment objectives, financial situations or needs. TTM assumes no responsibility or warranty for the accuracy and completeness of the information, investors should do their own research and may seek professional advice before investing.