消息称三星电子准备采用常规结构的1e nm DRAM内存

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30 Dec 2024

12月30日消息,三星电子准备启动采用常规结构的1e nm制程DRAM,实现先进内存开发多轨化,为未来可能的商业化提供更丰富技术储备。据悉,1e nm DRAM有望于2028年推出。

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