意法半导体申请用于半导体器件上的石墨烯层生长和同时的硅化钼形成方法专利,有助于半导体器件的材料改进

金融界
18 Jan

金融界 2025 年 1 月 18 日消息,国家知识产权局信息显示,意法半导体国际公司申请一项名为“用于半导体器件上的石墨烯层生长和同时的硅化钼形成的方法”的专利,公开号 CN 119314859 A,申请日期为 2024 年 7 月。专利摘要显示,本公开的实施例涉及一种用于半导体器件上的石墨烯层生长和同时的硅化钼形成的方法。提供了一种用于在半导体衬底上形成石墨烯层的方法、一种利用该石墨烯层形成...

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