【中信证券：美国对华先进存储限制再加码，倒逼高端存储产业链国产加速】金十数据1月18日讯，中信证券研报表示，1月15日晚间，BIS修订了《出口管理条例》（EAR），修改DRAM先进存储定义，工艺节点仍为18nm，存储单元面积及存储密度由24年12月的1ynm变为1xnm，同时增加TSV通孔数限制，对HBM和先进DRAM的限制再加码，倒逼产业链国产化加速。本次限制针对制造厂商及供应链，设计厂商业务正常开展，我们看好高端定制存储业务，持续推荐。同时我们认为，后续在本土高端封测厂商和设备厂商的配合下，国内DRAM原厂有望突破HBM，布局相关环节的厂商有望核心受益，看好高端存储产业链国产替代。
Disclaimer: Investing carries risk. This is not financial advice. The above content should not be regarded as an offer, recommendation, or solicitation on acquiring or disposing of any financial products, any associated discussions, comments, or posts by author or other users should not be considered as such either. It is solely for general information purpose only, which does not consider your own investment objectives, financial situations or needs. TTM assumes no responsibility or warranty for the accuracy and completeness of the information, investors should do their own research and may seek professional advice before investing.