在半导体制造中,2nm工艺是继3nm工艺节点之后的下一个MOSFET(金属氧化物半导体场效应晶体管)芯片微缩技术。“2nm”或“20埃”(英特尔使用的术语)与晶体管的任何实际物理特征(例如栅极长度、金属间距或栅极间距)无关。根据电气和电子工程师协会(IEEE)发布的2021 年更新的《国际设备和系统路线图》中的预测,“2.1 nm节点范围标签”预计接触栅极间距为 45 nm,最紧密金属间距为 20...
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