快科技1月21日消息,据韩国媒体报道,三星电子的第六代10纳米级1c DRAM制程开发进度出现延迟,预计完成时间从2024年年底推迟至2025年6月。这一延期意味着原计划于2025年下半年量产的第六代高频宽存储器(HBM4)也面临不确定性。三星在2024年年底向市场交付了首个测试芯片,但后续生产良率未达预期,导致开发时间延长,据市场人士透露,三星计划在未来六个月内将良率提升至约70%。按照过往经验...
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