在上周的国际固态电路会议(ISSCC)上,三星电子DS部门CTO宋在赫展示了多项前沿技术,包括晶圆键合、低温蚀刻和钼应用。这些技术将首先应用于400层NAND闪存,并有望实现超过1000层的堆叠。通过晶圆键合技术,三星计划突破单个晶圆500层的限制,采用多片晶圆堆叠的方式,如“Multi-BV NAND”结构,堆叠四片晶圆以打破结构限制。此外,三星还展示了低温蚀刻技术,该技术能够在极低温度下...
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