时代电气:公司正在加强SiC相关产品的研发和制造

互动易
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有投资者向时代电气提问, 2024 年 12 月发布 1200V SiC MOSFET 工程样品,效率较 IGBT 提升 5%,损耗降低 15%。请问该样品目前是否已经进入客户试用阶段?客户反馈如何?预计何时能实现量产? 什么时候会启动 8 英寸 SiC 衬底研发?公司回答表示,尊敬的投资者您好!公司正在加强SiC相关产品的研发和制造。

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