金融界2025年3月29日消息，国家知识产权局信息显示，应用材料公司申请一项名为“改进的锗蚀刻系统和方法”的专利，公开号 CN 119694885 A，申请日期为2018年8月。
专利摘要显示，用于蚀刻含锗材料的示例性方法可以包括在半导体处理腔室的远程等离子体区域中形成含氟前驱物的等离子体。方法可以包括：使含氟前驱物的流出物流过腔室部件中限定的孔。孔可以被涂覆有催化材料。方法可以包括用催化材料来降低等离子体流出物中的氟自由基的浓度。方法还可包括将等离子体流出物递送到半导体处理腔室的处理区域。具有含锗材料的暴露区域的基板可以被容置在处理区域内。方法还可包括蚀刻含锗材料。
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