意法半导体申请非易失性存储器架构专利,提高存储器性能

金融界
29 Mar

金融界2025年3月29日消息,国家知识产权局信息显示,意法半导体国际公司申请一项名为“非易失性存储器架构”的专利,公开号CN 119694367 A,申请日期为2024年9月。

专利摘要显示,本公开涉及非易失性存储器架构。一种非易失性存储器,其包括第一区域和第二区域,第一区域具有被配置为存储与网络的第一神经元相关联的值的第一存储元件,并且第二区域具有第二存储元件。控制电路将一个或多个第一输入值应用于第一读取路径,每个第一读取路径包括第一存储元件之一。计算电路将第一读取路径供应的电流相加以生成输出电流。编程电路将输出电流转换成编程电流,并且使用编程电流对第二存储元件进行编程。

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