金融界2025年4月5日消息，国家知识产权局信息显示，江苏东海半导体股份有限公司取得一项名为“一种多槽式4H-SiC MOSFET器件”的专利，授权公告号 CN 118213402 B，申请日期为2024年1月。
天眼查资料显示，江苏东海半导体股份有限公司，成立于2004年，位于无锡市，是一家以从事计算机、通信和其他电子设备制造业为主的企业。企业注册资本8150万人民币，实缴资本8149.999955万人民币。通过天眼查大数据分析，江苏东海半导体股份有限公司参与招投标项目6次，财产线索方面有商标信息6条，专利信息221条，此外企业还拥有行政许可29个。
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