比亚迪申请半导体热场结构件及其制备方法专利,使涂层不易脱落

金融界
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金融界2025年4月5日消息,国家知识产权局信息显示,比亚迪股份有限公司申请一项名为“半导体热场结构件及其制备方法”的专利,公开号CN 119753624 A,申请日期为2024年7月。专利摘要显示,一种半导体 热场结构件及其制备方法。制备方法包括以下 步骤:基材准备步骤,准备碳质基材,并将碳质 基材置于反应容器;制备碳化硅层步骤,通过 化学气相沉积在碳质基材的表面形成碳化硅 层;制备碳化钽层步骤...

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