比亚迪申请 3C-SiC 外延片及其制备方法专利,制得致命缺陷密度明显较低的 3C-SiC 外延片

金融界
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金融界 2025 年 4 月 5 日消息,国家知识产权局信息显示,比亚迪股份有限公司申请一项名为“3C-SiC 外延片及其制备方法”的专利,公开号 CN 119753832 A,申请日期为 2024 年 1 月。专利摘要显示,本发明涉及碳化硅材料技术领域,公开了一种 3C‑SiC 外延片及其制备方法。该方法包括以下步骤:(1)对硅衬底进行第一刻蚀;(2)在刻蚀后的硅衬底表面上形成第一碳化缓冲层;(...

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