分辨率、套刻精度、产能为光刻机核心参数。光刻工艺是芯片制造流程中技术难度最大、成本最高、周期最长的环节,直接决定了芯片的最小线宽,定义了半导体器件的特征尺寸,先进技术节点的芯片制造需要60-90 步光刻工艺,光刻成本占比约为30%,耗费时间占比约为40-50%。光刻中的核心工具包括光掩膜、光刻机和光刻胶,分辨率、套刻精度、产能为光刻工艺中的关键参数,分辨率是指光刻机能清晰地在晶圆上投影出的最小特征...
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