比亚迪半导体申请碳化硅功率器件元胞结构及其制备方法、半导体器件专利,增加源极结构提供更多载流子

金融界
22 Apr

金融界2025年4月22日消息,国家知识产权局信息显示,比亚迪半导体股份有限公司申请一项名为“碳化硅功率器件元胞结构及其制备方法、半导体器件”的专利,公开号CN119855208A,申请日期为2024年10月。专利摘要显示,本申请实施例公开一种碳化硅功率器件元胞结构及其制备方法、半导体器件,属于半导体技术领域。碳化硅功率器件元胞结构包括基底;栅极结构,栅极结构包括至少两个第一栅极结构,至少两个第一...

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