台积电公布N2 2nm缺陷率:比3/5/7nm都要好

快科技
Yesterday

在近日举办的北美技术论坛上,台积电首次公开了N2 2nm工艺的缺陷率(D0)情况,比此前的7nm、5nm、3nm等历代工艺都好的多。台积电没有给出具体数据,只是比较了几个工艺缺陷率随时间变化的趋势。台积电N2首次引入了GAAFET全环绕晶体管,目前距离大规模量产还有2个季度,也就是要等到年底。N2试产近2个月来,缺陷率和同期的N5/N4差不多,还稍微低一点,同时显著优于N7/N6、N3/N3P。从...

Source Link

Disclaimer: Investing carries risk. This is not financial advice. The above content should not be regarded as an offer, recommendation, or solicitation on acquiring or disposing of any financial products, any associated discussions, comments, or posts by author or other users should not be considered as such either. It is solely for general information purpose only, which does not consider your own investment objectives, financial situations or needs. TTM assumes no responsibility or warranty for the accuracy and completeness of the information, investors should do their own research and may seek professional advice before investing.

Most Discussed

  1. 1
     
     
     
     
  2. 2
     
     
     
     
  3. 3
     
     
     
     
  4. 4
     
     
     
     
  5. 5
     
     
     
     
  6. 6
     
     
     
     
  7. 7
     
     
     
     
  8. 8
     
     
     
     
  9. 9
     
     
     
     
  10. 10