台积电2nm工艺缺陷密度创新低,预计Q4按期量产

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台积电近期在北美技术研讨会上公布了其N2(2nm)工艺技术相对于同阶段前代工艺的缺陷密度(D0)。据该公司称,N2工艺的缺陷密度低于N3(3nm)、N5(5nm)和N7(7nm)制造节点。此外,幻灯片显示,台积电N2工艺距离量产还有两个季度,这意味着台积电有望按预期在2025年第四季度末开始生产2nm芯片。尽管台积电的N2工艺是该公司首个采用全栅环(GAA)纳米片晶体管的工艺技术,但该节点的缺陷...

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