InnoScience (Suzhou) Technology Holding (HKG:2577) has entered a joint development agreement with STMicroelectronics N.V. to advance gallium nitride (GaN) power technology, according to a Tuesday filing on the Hong Kong Exchange.
The partnership will enhance GaN applications in consumer electronics, data centers, automotive, and industrial power systems.
InnoScience will use ST's facilities outside China for GaN wafer production, while ST will utilize InnoScience's Chinese manufacturing capacity.
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