InnoScience (Suzhou) Technology (HKG:2577) launched its independently developed 1200V gallium nitride (GaN) product, a Monday filing with the Hong Kong bourse said.
The product leverages the wide bandgap characteristics to demonstrate exceptional performance in high-voltage and high-frequency applications, according to the gallium-nitride-on-silicon wafer manufacturer.
The product has entered mass production in medium-to-high power supply applications and will be applied in electric vehicles, AI data centers, and other fields.
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